s mhop microelectronics c orp. a STF620S features super high dense cell design for low r ds(on) . rugged and reliable. to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw nov,18,2009 1 details are subject to change without notice. s g d ver 1.0 product summary v dss i d r ds(on) (m ) max 60v 12a 105 @ vgs=4.5v 75 @ vgs=10v g d s stf series to-220f green product symbolv ds v gs i dm e as 6 65 w a p d c 21 -55 to 150 i d units parameter 60 12 36 c/w vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 30 mj absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja a 9.6 t c =70 c t c =70 c 13.3 w a a
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss pf c oss pf c rss pf q g nc t d(on) ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =6a v ds =5v , i d =6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =5a m ohm c f=1.0mhz c STF620S www.samhop.com.tw nov,18,2009 2 v sd nc q gs nc q gd gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.5a v i s maximum continuous drain-source diode forward current a notes nc v ds =30v,i d =6a,v gs =10v v ds =30v,i d =6a,v gs =4.5v b a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _ 1 ver 1.0 62 982 57 46 19 13.4 21.4 17.3 16 75 80 105 2.2 4 0.81 1.3 1.5 7.6 1 2 3 14.8
f igure 1. output c haracteris tics f igure 2. trans fer c haracteris tics v g s , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain c urrent(a) i d , drain c urrent (a) i d , drain c urrent (a) r ds (on) ( m ) f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage f igure 4. on-r es is tance variation with drain c urrent and temperature on-r es is tance r ds (on) , t j( c ) t j, j unction t emperature ( c ) f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) f igure 5. g ate t hres hold v ariation with t emperature STF620S ver 1.0 www.samhop.com.tw nov,18,2009 3 15 12 9 6 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 3 .5v v g s = 4v v g s = 4 .5v v g s = 10 v 15 12 9 6 3 0 0 0.9 5.4 4.5 3.6 2.7 1.8 25 c -55 c t j=125 c 150 125 100 75 50 25 1 1 3 6 9 12 15 v g s =10v v g s =4.5v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =6a v g s =4.5v i d =5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.30 1.20 1.10 1.00 0.90 0.80 0.70 125 150 100 75 50 25 0 -25 -50 i d =250ua
is , s ource-drain current (a) f igure 8. b ody diode f orward v oltag e v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) v g s , g ate- s ource voltage (v ) r ds (on) ( m ) f igure 7. on-r es is tance vs . g ate-s ource v oltage f igure 12. maximum s afe o perating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) v g s , g ate to s ource v oltage (v ) f igure 10. g ate c harge q g, t otal g ate c harge (nc ) f igure 9. c apacitance v ds , drain-to s ource voltage (v ) c , c apacitance (pf ) f igure 11.s witching characteris tics r g, g ate r es is tance ( w ) s witching t ime (ns ) STF620S ver 1.0 www.samhop.com.tw nov,18,2009 4 c is s c os s c rs s 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 180 150 120 90 60 30 0 2 4 6 8 10 0 i d = 6a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 75 c 125 c 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds =30v i d = 6a 1 10 100 1 10 100 300 vds=30v,id=1a vgs=10v tr td( of f ) tf td( on) 0.1 1 10 60 10 1 0.1 0.03 80 v gs =10v single pulse t a =25 c r d s ( o n) l im it dc 10 m s 1m s 10 0 u s
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 t rans ient t hermal impedance s quare wave p uls e duration (ms ec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective STF620S ver 1.0 www.samhop.com.tw nov,18,2009 5 d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e
STF620S ver 1.0 www.samhop.com.tw nov,18,2009 6 e # # . % . d . . ' h d g i j f o a a1 b b1 c c2 e l1 l2 l4 l5 o e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70
STF620S ver 1.0 www.samhop.com.tw nov,18,2009 7 f tube
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